| PART |
Description |
Maker |
| A29800 A29800UV-90 A29800UM-90 A29800TM-90 A29800T |
240 x 128 pixel format, LED or EL Backlight 1024K × 8 16位为512k ×电压的CMOS 5.0只，引导扇区闪存
1024K X 8 Bit / 512K X 16 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory 1024K × 8 16位为512k ×电压的CMOS 5.0只，引导扇区闪存
PULSER PROBE 1024K × 8 16位为512k ×电压的CMOS 5.0只，引导扇区闪存
Aerials (Antennas); Bandwidth Max:500MHz; For Use With:Hand-Held Spectrum Analyzer; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No 1024K × 8 16位为512k ×电压的CMOS 5.0只，引导扇区闪存
Dipole Antenna; Bandwidth Max:2.2GHz; For Use With:Hand-Held Spectrum Analyzer; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No 1024K × 8 16位为512k ×电压的CMOS 5.0只，引导扇区闪存
240 x 128 pixel format, CFL Backlight with power harness
128 x 64 pixel format, LED Backlight available
|
AMIC Technology, Corp.
AMIC Technology Corporation
|
| AT27BV800 AT27BV800-12JC AT27BV800-12RC AT27BV800- |
8-Megabit 512K x 16 or 1024K x 8 Unregulated Battery-Voltage High Speed OTP EPROM 512K X 16 OTPROM, 150 ns, PDSO44
8-Megabit 512K x 16 or 1024K x 8 Unregulated Battery-Voltage High Speed OTP EPROM 512K X 16 OTPROM, 150 ns, PQCC44
|
ATMEL[ATMEL Corporation]
Atmel, Corp.
|
| EN29LV800T70RS EN29LV800T70RSI EN29LV800T70RSIP EN |
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
|
Eon Silicon Solution Inc.
ETC
|
| EN29F800T90S EN29F800T90SI EN29F800T90T EN29F800T9 |
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 5.0 Volt-only
|
Eon Silicon Solution
|
| EN29LV800A EN29LV800AB-55RBC EN29LV800AB-55RBCP EN |
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
|
Eon Silicon Solution Inc.
|
| EN29LV800 |
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory/ CMOS 3.0 Volt-only
|
ETC
|
| EN29LV800B70RSIP EN29LV800T70RSIP EN29LV800B70RS E |
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only 8兆位024K × 812k × 16位）闪存引导扇区闪存，CMOS 3.0伏，
122 x 32 pixel format, LED or EL Backlight available
|
Electronic Theatre Controls, Inc.
Eon Silicon Solution Inc.
|
| IS61LF25672A-6.5B1I IS61LF102418A-7.5TQI IS61LF102 |
256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
|
Integrated Silicon Solution, Inc.
SRAM
|
| TC55W800FT-70 |
512K Word x 16 Bit/1M Word x 8 Bit Full CMOS Static RAM(512K x 16 1M x 8 CMOS 静态RAM) 12k字16 Bit/1M字8位全部的CMOS静态RAM（为512k字16 100万字× 8位的CMOS静态RAM）的
|
Toshiba Corporation
Toshiba, Corp.
|
| TC55VD1636FF-133 |
512K Word x 36 Bit Synchronous No-turnround Static RAM(512K 字x36位同步无转向静RAM)
|
Toshiba Corporation
|
